GJ-58001 Epitaxial Wafer

Product Information:
Epitaxy involves growing one or more new silicon single crystal layers on a polished wafer via chemical vapor deposition. The layers meet specific device requirements in doping type, resistivity, thickness, lattice structure, uniformity, and defect density.
 
Product Parameters:
Diameter: 150/200/300 mm
Doping: P-type (Boron), N-type (Phosphorus)
Epitaxial Layer Thickness: 1-150 µm
Epitaxial Layer Resistivity: 0.02-1000 ohm-cm
Epitaxial Layers: Single or Multiple
Crystal Orientation: (111), (100)
 
Process Overview:
The product is highly competitive,one of the few domestic manufacturers with full-process capabilities from crystal growth to epitaxial growth. The company offers customized silicon epitaxial wafers with integrated process solutions tailored to match different specifications, ensuring the effective alignment of epitaxial layers and substrates.
 
Production Steps:
Epitaxial Growth: Using chemical vapor deposition to grow specified single crystal layers, controlling resistivity and key parameters like thickness uniformity and defect control.
Cleaning: Removal of contaminants from the wafer surface.
Inspection: Measurement of physical properties and detection of surface defects.
Packaging: Wafer boxes are sealed with PE and aluminum foil bags to protect quality during storage and transport.
 
Applications: The company's silicon epitaxial wafers, with high voltage resistance and low conduction resistance, ensure stable operation of devices. They are primarily used in manufacturing power devices like MOSFETs, IGBTs, and CMOS image sensors, among others. These wafers find wide applications in automotive, communications, power, industrial, and consumer electronics sectors.