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YT-50001 4H-Conductive Silicon Carbide Single Crystal Substrate

YT-50001 4H-Conductive Silicon Carbide Single Crystal Substrate

Constantly striving for higher crystal and processing quality to better meet customer needs. Currently available in mass production for 6-inch and 8-inch conductive products.
 
Basic Information:
  • Conductive Type: 4H
  • Crystal Type: 4H
  • Diameter (mm): 150/200
  • Off-Angle (°): 4
  • Thickness (μm): 350/500
  • Surface Condition: Epi-ready
 
Power Electronic Devices:
By growing a silicon carbide epitaxial layer on a conductive silicon carbide substrate, SiC homoepitaxial wafers can be produced, further manufacturing Schottky diodes, MOSFETs, IGBTs, etc. Used in electric vehicles, rail transit, and high-power transmission and transformation.

  • Application Scenarios:

    Application Scenarios and Target Audience for YT-50001 4H-Conductive Silicon Carbide Single Crystal Substrate:

    Application Scenarios:

    • Power Electronics: Used in the production of Schottky diodes, MOSFETs, and IGBTs, which are essential in electric vehicles, rail transit, and high-power transmission systems.
    • Renewable Energy: Critical for components in solar inverters and wind power converters.
    • High-Frequency Communication: Applicable in 5G base stations and radar systems.

     

    Target Audience:

    • Automotive Industry: Companies producing electric vehicles and related power systems.
    • Energy Sector: Firms involved in renewable energy, especially in the development of solar and wind energy.
    • Communication Technology: Manufacturers of high-frequency and high-power communication devices.

     

    Market Potential and Opportunities in Latin America, Arab States, and Africa:

    Market Potential:

    • Growing Demand: These regions are experiencing a surge in demand for electric vehicles, renewable energy, and modern communication infrastructure.
    • Government Initiatives: Many countries in these regions are adopting policies to encourage green energy and smart infrastructure, which will drive demand for advanced power electronics.

     

    Opportunities:

    • Electric Vehicles: The rapid growth of the EV market in these regions offers a significant opportunity for SiC-based power electronics.
    • Infrastructure Development: Expanding infrastructure projects, including railways and power grids, present a lucrative market for high-power devices.
    • Renewable Energy Projects: The ongoing investment in solar and wind energy projects creates demand for efficient power management solutions.

     

    Recommended Resources and Conditions for Distributors:

    • Technical Expertise: Distributors should have a basic understanding of semiconductor technologies to effectively market and support the product.
    • Established Relationships: Access to automotive, energy, and communication sectors will be crucial for successful market penetration.
    • Logistics Capability: Ability to handle importation, storage, and distribution of high-tech materials across the region.
    • Customer Support: Capability to provide after-sales support and technical assistance to local customers.

     

    Key Customer Targets:

    • Automotive Manufacturers: Particularly those focusing on electric vehicles.
    • Energy Companies: Engaged in renewable energy projects.
    • Telecommunication Firms: Involved in the deployment of 5G and other high-frequency communication networks.
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