YT-50002 4H-Semi-Insulating Substrate
Relentlessly pursuing higher crystal and processing quality
Better meeting customer needs
Currently available in 4-inch and 6-inch products, with 8-inch products under development
Basic Information:
- Semi-insulating
- Crystal Structure: 4H
- Diameter (mm): 100 & 150
- Off-Angle (°): 0
- Thickness (μm): 500
- Surface Condition: Epi-ready
Microwave RF Devices:
By growing a GaN epitaxial layer on the semi-insulating SiC substrate, GaN-on-SiC epitaxial wafers can be fabricated. These are used to create HEMT and other microwave RF devices, applicable in information communication, radar detection, and more.
Application Scenarios:
Application Scenarios and Target Markets for YT-50002 4H-Semi-Insulating Substrate:
Application Scenarios:
The YT-50002 4H-Semi-Insulating Substrate is ideal for developing microwave RF devices like HEMTs, used in:
- Information Communication: Enhancing data transmission quality and speed.
- Radar Detection: Crucial for defense and navigation technologies.
Market Potential in Latin America, Arab Countries, and Africa:
- Growing Tech Industries: These regions are experiencing rapid growth in telecommunications and defense sectors.
- Emerging Markets: Demand for advanced communication infrastructure and radar systems is rising, creating substantial opportunities.
Resources and Conditions for Distributors:
- Technical Expertise: Basic understanding of semiconductor technology.
- Industry Connections: Access to telecom, defense, and infrastructure sectors.
- Marketing Capability: Ability to educate local markets on the benefits of advanced semiconductor materials.
